Alacron's New Backside Imager Uses JPL's Patented Delta Doping
Posted by: Site Administrator on Tuesday, May 22, 2012 at 12:00:00 am
The back side imager utilizes JPL's patented delta doping process. This technology plays a vital role in the semiconductor industry. From the "Semiconductor Glossary," delta doping is defined as: "formation of the doped layers which are atomic-layer thick, formed in the course of Molecular Beam Epitaxy (MBE) of multilayer structures such as superlattices."
Enabling semiconductor manufacturers to better inspect their delicate product with microscopic parts has long been a primary goal of the machine vision industry. (Click HERE to read a relevant 2009 article in VSD Magazine.) The semiconductor industry, which began around 1960, has grown to over $350 billion in 2010. Alacron's new Backside Imager is an extremely valuable improvement on existing technology for manufacturers in this industry. It will allow for better, faster and less expensive inspection of semiconductors, enabling much better detection of abnormalities in their atom-thin layers.
Alacron's Development Partner, JPL, Presents Newly Patented, Multi-layered “Superlattice-Doped” CMOS Detector: Demonstrates Unique Stability in DUV Conditions
The FC300 Using Panavision's CMOS Sensor and JPL's Patented Delta Doping to be Showcased May 8th at AIA East